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IRF630M IRF630MFP
N-channel 200V - 0.35 - 9A - TO-220 /TO-220FP Mesh OverlayTM Power MOSFET
General features
Type IRF630M IRF630MFP

VDSS (@Tjmax) 200 V 200 V
RDS(on) < 0.40 < 0.40
ID 9A 9A
1 2 3
3 1 2
Extremely high dv/dt capability Very low intrinsic capacitances Gate charge minimized
TO-220
TO-220FP
Description
This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources. Isolated TO220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCB's.
Internal schematic diagram
Applications
Switching application
Order codes
Part number IRF630M IRF630MFP Marking IRF630M IRF630MFP Package TO-220 TO-220FP Packaging Tube Tube
June 2006
Rev 2
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Contents
IRF630M - IRF630MFP
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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IRF630M - IRF630MFP
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum rating
Parameter IRF630M Value IRF630MFP 200 200 20 9 5.7 36 75 0.6 5 --65 to 150 150 9
(1) (1)
Unit
VDS VDGR VGS ID ID IDM
(2)
Drain-source Voltage (VGS = 0) Drain-gate voltage (RGS = 20 kW) Gate- source voltage Drain current (continuos) at TC = 25C Drain current (continuos) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor
V V V A A A W W/C V/ns V C C
5.7
36 30 0.24 5 2500
PTOT
(3)
dv/dt
Peak diode recovery voltage slope Insulation winthstand voltage (DC) Storage temperature Max. operating junction temperature
VISO Tstg Tj
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX. 9A,
Table 2.
Thermal data
TO-220 TO-220FP 4.17 62.5 300 C/W C/W C 1.67
Rthj-case Thermal resistance junction-case max Rthj-amb Tl Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose
Table 3.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Value 5 350 Unit A mJ
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Electrical characteristics
IRF630M - IRF630MFP
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS = 0 VDS = max rating VDS = max rating, TC = 125 C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 4.5A 2 3 0.35 Min. 200 1 50 100 4 0.40 Typ. Max. Unit V A A nA V
IDSS
IGSS VGS(th) RDS(on)
Table 5.
Symbol gfs (1) Ciss Coss Crss td(on tr tr(Voff) tf Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test conditions VDS > ID(on) x RDS(on)max, ID = 4.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. 3 Typ. 4 540 90 35 10 15 12 12 31 7.5 9 700 Max. Unit S pF pF pF ns ns ns ns nC nC nC
VDD = 100V, ID = 4.5A RG = 4.7 VGS = 10V
14 20 17 17 45
VDD = 160V, ID = 9A, VGS = 10V
1. Pulsed: pulse duration = 300s, duty cycle 1.5%
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IRF630M - IRF630MFP
Electrical characteristics
Table 6.
Symbol ISD ISDM
(1)
Sourse drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 9A, VGS = 0 170 0.95 11 Test conditions Min. Typ. Max. 9 36 1.5 Unit A A V ns nC A
VSD (2) trr Qrr IRRM
Reverse recovery time I = 9A, di/dt = 100A/s Reverse recovery charge SD VDD = 50V, Tj = 150C Reverse recovery current
1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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Electrical characteristics
IRF630M - IRF630MFP
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220
Figure 3.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
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IRF630M - IRF630MFP Figure 7. Transconductance Figure 8.
Electrical characteristics Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage vs temperature
Figure 12. Normalized on resistance vs temperature
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Electrical characteristics Figure 13. Source-drain diode forward characteristics
IRF630M - IRF630MFP
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IRF630M - IRF630MFP
Test circuit
3
Test circuit
Figure 15. Unclamped inductive waveform
Figure 14. Unclamped Inductive load test circuit
Figure 16. Switching times test circuit for resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load switching and diode recovery times
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Package mechanical data
IRF630M - IRF630MFP
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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IRF630M - IRF630MFP
Package mechanical data
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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Package mechanical data
IRF630M - IRF630MFP
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.5 1.5 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1 H
F2
E
L2 L5
123
L4
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G
IRF630M - IRF630MFP
Revision history
5
Revision history
Table 7.
Date 21-Jun-2004 28-Jun-2006
Revision history
Revision 1 2 Preliminary version New template, no content change Changes
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IRF630M - IRF630MFP
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